OnTest-Compact Discrete Semiconductor Tester

OnTest Model T-201 Compact Discrete Semiconductor Tester is a Full Functional Electrical Characteristics Tester for a wide range of Discrete Semiconductors, namely :

	Transistors and Diodes
	Bridge Rectifier
	FETs
	MOSFETs
	SCR, Triac
	Voltage Regulators
	High Voltage Applications upto 2.5 KV
	High Current Applications upto 100 A
	Wafer Fab – Die Testing/Wafer Probing

1.0 Transistors and Diodes Testing

OnTest Model T-201 Tester – Standard Configuration

Voltage / Current Capability - 1000V / 20A for Testing:

	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_EBO

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters - on selection of respective Option(s)

X-Supply Option (V_CEX and I_CEX Testing)

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

Configuration Diagrams

1.1 Testing of Devices for Quality Control/Quality Assurance/ IQC/Research Labs/Test Centre/Test House

1.2 Medium Volume Production Environment Testing of Devices including QC/QA/ R & D

1.3 Production Volume Testing

Note – Four (4) Stations Multiplexing Option also available. On ordering this option a combination of upto four (4) Handlers (one head box required per handler – customer provided handlers) and/or Manual Test Stations may be configured with one (1) OnTest Model T-201 Tester.

2.0 Bridge Rectifier Testing

OnTest Model T-201 Tester – Standard Configuration with Module for Bridge Rectifier Testing

Voltage / Current Capability - 1000V / 20A for Testing:

	Bridge Rectifiers upto four (4) leads
	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For Bridge Rectifiers

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_EBO

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters - on selection of respective Option(s)

X-Supply Option (V_CEX and I_CEX Testing)

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

Configuration Diagrams

2.1 Low Volume Production Testing of Devices including for QC/QA/ R & D/Test Centre/Test House

2.2 Medium Volume Production Environment Testing of Devices including for QC/QA/R & D

2.3 Production Environment Testing

3.0 FET Testing

OnTest Model T-201 Tester - FET Testing Capability Configuration

Voltage / Current Capability - 1000V / 20A for Testing:

	FETs
	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For FETs

Leakage Current :

I_{DS (O,S,R)}, I_{DG (O,S,R)} ,
I_SG, I_SGS, I_DSX

Breakdown Voltages :

V_DS(O,S,R), V_DG(O,S,R), V_SG, V_DSX V_SGS

Threshold Voltage :

V_GS(th)

On Voltage :

V_DS(on)

On Resistance :

r_DS(on)

Drain Source Current :

I_D(on)

Forward Voltage :

V_FSGD, V_FGS,

Pinch OFF Voltage :

V_P

Transconductance :

G_MI, G_MV,

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO, I_CEX

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_CEX

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

AC Gain :

h_fe

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters – built-in with MOSFET Option

V_CEX and I_CEX Testing

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

Configuration Diagrams

3.1 Low Volume Production Testing of Devices including for QC/QA/ R & D/Test Centre/Test House

3.2 Medium Volume Production Environment Testing of Devices including for QC/QA/R & D

3.3 Production Environment Testing

4.0 MOSFET Testing

OnTest Model T-201 Tester - MOSFET Testing Capability Configuration

Voltage / Current Capability - 1000V / 20A for Testing:

	MOSFETs
	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For MOSFET

Leakage Current :

I_{DS (O,S,R)}, I_{DG (O,S,R)} ,
I_SG, I_SGS, I_DSX

Breakdown Voltages :

V_DS(O,S,R), V_DG(O,S,R), V_SG, V_DSX V_SGS

Threshold Voltage :

V_GS(th)

On Voltage :

V_DS(on)

On Resistance :

r_DS(on)

Drain Source Current :

I_D(on)

Forward Transconductance :

g_FS

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO, I_CEX

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_CEX

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

AC Gain :

h_fe

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters – built-in with MOSFET Option

V_CEX and I_CEX Testing

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

Configuration Diagrams

4.1 Low Volume Production Testing of Devices including for QC/QA/ R & D/Test Centre/Test House

4.2 Medium Volume Production Environment Testing of Devices including for QC/QA/R & D

4.3 Production Environment Testing

5.0 SCR/Triac Testing

OnTest Model T-201 Tester – SCR/Triac Testing Capability Configuration

Voltage / Current Capability - 1000V / 20A for Testing:

	SCR/Triac
	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For SCR/Triac

Leakage Current :

I_DRM, I_DRM2, I_RGM

Breakdown Voltages :

V_DRM, V_DRM2, V_RGM

Forward voltage :

V_GFM

On Voltage :

V_TM(on)

Trigger Current :

I_GTF, I_GTS, I_GTF2, I_GTS2

Trigger Voltage :

V_GTF, V_GTS, V_GTF2, V_GTS2

Holding Current :

I_H, I_H2

Latching Current :

I_LF, I_LS, I_LF2, I_LS2

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO, I_CEX

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_CEX

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

AC Gain :

h_fe

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters – built-in with SCR/Triac Option

V_CEX and I_CEX Testing

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

Configuration Diagrams

5.1 Low Volume Testing of Devices including for QC/QA/ R & D/Test Centre/Test House

5.2 Medium Volume Production Environment Testing of Devices including for QC/QA/R & D

5.3 Production Environment Testing

6.0 Voltage Regulator Testing

OnTest Model T-201 Tester – Standard Configuration with Voltage Regulator Module

Voltage / Current Capability - 1000V / 20A for Testing:

	Voltage Regulators
	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For Voltage Regulators

Output Voltage:

V_out

Quiescent Current :

I_Q

Breakdown Current :

I_BD

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO, I_CEX

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_CEX

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

AC Gain :

h_fe

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters – on selection of respective option(s)

V_CEX and I_CEX Testing

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

Configuration Diagrams

6.1 Low Volume Testing of Devices including for QC/QA/ R & D/Test Centre/Test House

6.2 Medium Volume Production Environment Testing of Devices including for QC/QA/R & D

6.3 Production Environment Testing

7.0 High Voltage Testing Capability

OnTest Model T-201 Tester – High Voltage Testing Configuration

Voltage / Current Capability – 2,500V / 20A for Testing:

	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO , I_CEX

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_CEX

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

AC Gain :

h_fe

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters - on selection of respective Option(s)

X-Supply Option (V_CEX and I_CEX Testing)

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

MOSFET Option

Leakage Current :

I_{DS (O,S,R)}, I_{DG (O,S,R)} , I_SG, I_SGS, I_DSX

Breakdown Voltages :

V_DS(O,S,R), V_DG(O,S,R) , V_SG , V_DSX , V_SGS

Threshold Voltage :

V_GS(th)

On Voltage :

V_DS(on)

On Resistance :

I_DS(on)

Drain Source Current :

I_D(on)

Forward Transconductance :

g_FS

SCR/Triac Option

Leakage Current :

I_DRM, I_DRM2, I_RGM

Breakdown Voltages :

V_DRM, V_DRM2 , V_RGM

Forward voltage :

V_GFM

On Voltage :

V_TM

Trigger Current :

I_GTF, I_GTS, I_GTF2, I_GTS2

Trigger Voltage :

V_GTF, V_GTS, V_GTF2, V_GTS2

Holding Current :

I_H, I_H2

Latching Current :

I_LF, I_LS, I_LF2, I_LS2

Configuration Diagrams

7.1 – Low Volume Testing of HV Devices including for QC/QA/ R & D/Test Centre/Test House usages.

7.2 - Medium Volume Production Environment Testing of HV Devices including for QC/QA/R & D

7.3 - Production Environment Testing

Four (4) Stations Multiplexing Option also available. On ordering this option a combination of upto four (4) Handlers (one head box required per handler – customer provided handlers) and/or Manual Test Stations may be configured with one (1) OnTest Model T-201 Tester.

8.0 High Current Testing Capability

OnTest Model T-201 Tester – High Current Testing Configuration

Voltage / Current Capability – 1,000V / 100A for Testing:

	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO , I_CEX

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_CEX

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

AC Gain :

h_fe

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters - on selection of respective Option(s)

X-Supply Option (V_CEX and I_CEX Testing)

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

MOSFET Option

Leakage Current :

I_{DS (O,S,R)}, I_{DG (O,S,R)} , I_SG, I_SGS, I_DSX

Breakdown Voltages :

V_DS(O,S,R), V_DG(O,S,R) , V_SG, V_DSX, V_SGS

Threshold Voltage :

V_GS(th)

On Voltage :

V_DS(on)

On Resistance :

r_DS(on)

Drain source current :

I_D(on)

Forward transconductance :

g_FS

SCR/Triac Option

Leakage Current :

I_DRM, I_DRM2, I_RGM

Breakdown Voltages :

V_DRM, V_DRM2 , V_RGM

Forward voltage :

V_GFM

On Voltage :

V_TM

Trigger Current :

I_GTF, I_GTS, I_GTF2, I_GTS2

Trigger Voltage :

V_GTF, V_GTS, V_GTF2, V_GTS2

Holding Current :

I_H, I_H2

Latching Current :

I_LF, I_LS, I_LF2, I_LS2

Configuration Diagrams

8.1 – Low Volume Testing of High Current Devices including for QC/QA/ R & D/Test Centre/Test House usages.

8.2 - Medium Volume Production Environment Testing of High Current Devices including for QC/QA/R & D

8.3 - Production Environment Testing

9.0 Wafer Fab – Die Testing/Wafer Probing

OnTest Model T-201 Tester may be selected, as per customer’s application requirement.

Voltage / Current Capability - 1000V / 20A for Testing:

	Transistors - Small Signal/Medium Power/Power
	Diodes - Switching/Zener/Schottky/Rectifiers

Testing Parameters

For Transistors

Leakage Current :

I_CEO(S,R), I_CBO, I_EBO , I_CEX

Breakdown Voltages :

V_CEO(S,R), V_CBO, V_CEX

DC Gain :

h_FE

Saturation Voltage :

V_CE(sat), V_BE(sat)

Forward Voltage :

V_FBE, V_FEC, V_FBC

Base turn on Voltage :

B_ton

AC Gain :

h_fe

For Diodes

Leakage Current :

I_R

Breakdown Voltages :

V_Z

Forward Voltage :

V_F

Zener Impedance :

R_D

Additional Testing Parameters - on selection of respective Option(s)

X-Supply Option (V_CEX and I_CEX Testing)

Transistors :

Breakdown Voltage: V_CEX
Leakage Current: I_CEX

Testing of AC Parameters

Zener Diodes :

Dynamic Impedance R_D

Transistors :

AC Gain- h_fe

MOSFET Option

Leakage Current :

I_{DS (O,S,R)}, I_{DG (O,S,R)} , I_SG, I_SGS, I_DSX

Breakdown Voltages :

V_DS(O,S,R), V_DG(O,S,R) , V_SG, V_DSX, V_SGS

Threshold Voltage :

V_GS(th)

On Voltage :

V_DS(on)

On Resistance :

r_DS(on)

Drain source current :

I_D(on)

Forward transconductance :

g_FS

SCR/Triac Option

Leakage Current :

I_DRM, I_DRM2, I_RGM

Breakdown Voltages :

V_DRM, V_DRM2 , V_RGM

Forward voltage :

V_GFM

On Voltage :

V_TM

Trigger Current :

I_GTF, I_GTS, I_GTF2, I_GTS2

Trigger Voltage :

V_GTF, V_GTS, V_GTF2, V_GTS2

Holding Current :

I_H, I_H2

Latching Current :

I_LF, I_LS, I_LF2, I_LS2

Configuration Diagram

9.1 – Wafer Fab - Chip/Dice Testing